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1.  GaAs-Gunn diodes with small levels of power constitution for mm-range oscillators
E.D. Prokhorov, A.V. Dyadchenko, N.E. Polyansky
Gunn diodes, microwave powers, efficiency, generators mm-range
Vestnik KhNU №712 Pages. 115-118

Experimentally investigated small level operating power GaAs generators mm-range. Samples of diodes made in Problem laboratory of semiconductor engineering of the Karazin Kharkov National University. GaAs -Gunn diodes oscillators operated in continuous mode. The obtained experimentally operated powers made 10...30 mW, the useful microwave powers - 0,1...0,3 mW at an efficiency of 1...2 % over the range frequencies of 60...75 GHz. Probably further reduction consumed by diodes and oscillators of power up to hundreds and tens 10-3W



2.  GAUSSIAN EXPANSIONS FOR RADIATION PATTERN OF AN OPEN-ENDED LINE WITH IMPEDANCE BORDERS
A.P. Udovenko
aperture distribution, impedance border, orthogonal functions, diffraction integral, feed
Vestnik KhNU №756 Pages. 87-90

Near-field and far-field two-parameter expansions in terms of Laguerre-Gaussian orthogonal basis functions are proposed, which take into account the effect of impedance feed borders. The expansions enable the feed characteristics on a base of lines with impedance borders to be calculated in wide frequency region. Radiation intensity distributions for the open-ended two-layer metal-shielded dielectric waveguide in a nonresonance regions of surface impedance varying, relative errors of expansion truncations, comparison with experimental data are presented



3.  Global Sensitivity analysis of the dipole matrix element according to variation of parameters of the indium surface segregation in ingan/gan quantum well
M.V. Klymenko
indium surface segregation, semiconductor nitrides, piezoelectric polarization, dipole matrix element, global sensitivity analysis
Vestnik KhNU №853 Pages. 8-14

In this paper, influence of the indium surface segregation on dipole matrix element for InGaN/GaN heterostructure is under investigation. The global sensitivity analysis has been applied for quantitative estimation of the indium surface segregation effect at each interface of the quantum well. Together with the indium surface segregation, the piezoelectric effects are considered. It has been shown that joint action of the piezoelectric fields and the indium surface segregation leads to changes in the selection rules for optical transitions. Results give the method to apply the optical spectroscopy for observation of the indium surface segregation


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