Kharkov National University
Main / Vestnik KhNU /Radiophysics and Electronics
Edit. Board
For authors

1.  Millimeter wave rotational spectrum of the lower excited vibrational states of CH3CF2Cl
O.I. Baskakov, V.V. Ilyushin, E.A. Alekseev
molecule, rotational spectrum, interacting states, Hamiltonian, HCFC-142b
Vestnik KhNU 712 Pages. 3-9

The millimeter rotational spectrum of CH3CF2CI has been investigated. The rotational, centrifugal distortion and quadrupole coupling parameters have been determined for the vibrational states with energies below 600 cm-1. Parameters of the ground and 111, 171, 181, 171181 and 111 states have been obtained for both chlorine isotopic species. In addition, the 1111, 182, 101, 161, 91 and 111181 vibrational states have been studied for CH3CF235C1 molecule. It was found the interaction between 101 and 161, and 91 and 111 181 couples. The transition frequencies calculated with the parameters obtained coincide with the measured ones within experimental uncertainties.

2.  Longitudinal slot radiators cut in circular waveguide
E.Y. Belogurov, V.A. Katrich, V.A. Lyaschenko
circular waveguide, axial slot, electromagnetic waves, radiation, slot antennas
Vestnik KhNU 712 Pages. 37-41

Using method of magnetomotive forces investigations of behaviors of longitudinal slots that were cut in wall of the circular waveguide were carried out. Expressions of internal self-admittance and transfer conductance were de- rived. The possibility of creation of a tapered illumination that forms radiation pattern with low side lobes on long slot cut in circular waveguide was shown

3.  Impedance of connected in series diodes with difference negative conductivity
E.D. Prokhorov
tunnel diode, negative conductivity, frequency range
Vestnik KhNU 712 Pages. 111-114

The impedance connected in series negative difference conductivity diodes in wide frequency range are analyses. There are frequency region that diodes combination work have been appeared. The operation frequencies for combination of tunnel diodes are 35-40 GHz

4.  GaAs-Gunn diodes with small levels of power constitution for mm-range oscillators
E.D. Prokhorov, A.V. Dyadchenko, N.E. Polyansky
Gunn diodes, microwave powers, efficiency, generators mm-range
Vestnik KhNU 712 Pages. 115-118

Experimentally investigated small level operating power GaAs generators mm-range. Samples of diodes made in Problem laboratory of semiconductor engineering of the Karazin Kharkov National University. GaAs -Gunn diodes oscillators operated in continuous mode. The obtained experimentally operated powers made 10...30 mW, the useful microwave powers - 0,1...0,3 mW at an efficiency of 1...2 % over the range frequencies of 60...75 GHz. Probably further reduction consumed by diodes and oscillators of power up to hundreds and tens 10-3W

5.  Same question of modeling of tunnel contact semiconductor structure
O.V. Botsula, E.D. Prokhorov
tunnel cathode, negative differential conductivity, contacts, current - voltage characteristics, cathode, anode
Vestnik KhNU 712 Pages. 119-122

Electronic processes are considered at course of a current through semi-conductor structure with the tunnel cathode. The approach to modelling the structures including as a component tunnel geterojunction is offered. Static characteristics of structures to a basis geterojunction GaAs/AIGaAs received with application of the offered technique are resulted

6.  The spectrum of current oscillations of Gunn diodes with the impact ionization in moving domains
D.V. Pavlenko, E.D. Prokhorov
Gunn diode, impact ionization, UHF-noise
Vestnik KhNU 712 Pages. 123-126

The results of the numerical simulation of the GaAs Gunn diode with electric field strengths, enough for development of the impact ionization in the moving high-field domains, are presented. The form of current oscillations and frequency spectrums is in good agreement with experimentally measured data. It is shown that the Gunn diode, operating under conditions of the impact ionization, may be used as a source of wide spectrum UHF-noise

S.N. Shulga, I.E. Khodasevych
composite media, thin-wire resonance inclusions, permittivity, permeability, scattering of electromagnetic waves
Vestnik KhNU 756 Pages. 38-41

This paper presents physical and mathematical model and investigation of electromagnetic properties of composite material made of straight and curved conducting resonance inclusions placed into isotropic media and forming periodic lattice. The effective constitutive parameters of the composite material are found. It is revealed that on resonance frequency real parts of permittivity and permeability of such media can assume simultaneously negative values. The problem of reflection and transmission of plane electromagnetic wave through a sequence of layers made of such composite material is solved, numerical results are presented

8.  Al0,3Ga0,7As/GaAs cathode transfer electron diode's efficiency
O.V. Botsula Prokhorov E.D, A.V. Dydchenko
doping, cathode contact, tunnelling, negative differential conductivity, oscillation efficiency
Vestnik KhNU 756 Pages. 97-100

The results of analyse efficiency of GaAs/ Al0,3Ga0,7As/GaAs GaAs/ Al0,3Ga0,7As/GaAs / GaAs cathode transfer electron diode are present. The space charge model are used. There are two region of negative differential conductivity of current - voltage characteristic are shown . The condition lead to oscillation due both region and oscillation efficiency have been determined.

9.  Wide range mm-wave GAAS- oscillator with electronic frequency gliding
A.V. Dyadchenko, E.D. Prokhorov
oscillators, electronic frequency gliding, oscillating efficiency
Vestnik KhNU 756 Pages. 101-104

The wide range mm - wave GaAs oscillators with electronic frequency gliding are considered. The oscillator is operated up 60 to 70 GHz on second harmonic. The electronic gliding is perfomed to obtaine of 9 GHz change of frequency

10.  AlN/AlxGa1-xN resonance tunnell diodes
D.V. Pavlenko, E.D. Prokhorov
nitrides, quantum well, NDC, oscillation efficiency.
Vestnik KhNU 756 Pages. 105-108

Double and threefold compounds of nitrides AIN/AIGaN resonance tunnel diodes using height of barriers are concedered. In the quantum well of diodes there are a plenty energy levels. Electron energy levels in quantum well with variable structure of interconnections AlGaN are determined. The current - voltage characteristics of resonance - tunnel diodes with number of levels in a quantum wall up to five has been calculated. The RTD can have up to five sites with negative differential conductance are demonstrated. The possible RTD oscillation efficiency on all sites of negative differential conductivity at difference barriers and quantum well's material are determined.

11.  Influence of impact ionization on efficiency of rsca-diodes operation on basis of InN, GaN, AIN
D.V. Pavlenko, E.D. Prokhorov
nitrides, RSCA oscillators, oscillating efficiency, drift velocity
Vestnik KhNU 756 Pages. 109-112

The impact ionisation in RSCA diodes is considered on the basis of nitrides InN, GaN, AIN. Possible overvoltage on diodes and possible efficiency of generation are analyzed. It is shown, that at development of a impact ionisation in RSCA diodes in correspondence with the diffusion theory the considered materials are perspective for RSCA diodes for operation in centimeter and millimeter wavebands (voltage over threshold 3 ... 5 at efficiency up to 11 ... 13 %)

12.  Amplitude and noise features of detectors a mm of range of lengths of waves on base of contacts a metal-semimetal BiSb
O.N. Sukhoruchko, V.T. Plaksiy, E.D. Prokhorov, A.V. Dyadchenko
contact metal-semimetal BiSb, power zones, contact a metai-semimetal BiSb, millimeter range of lengths of waves, relative noise temperature, influence of displacing and resistances of contacts on sensitivity
Vestnik KhNU 756 Pages. 113-117

In work are brought results of analytical and experimental thermoelectrical detector study with the point contact a metal-semi-metal BiSb. Determined relative noise temperature, as well as influence of displacing and resistances of contacts on the sensitivity in 8 mm range of waves.

Nesterenko, E.Y. Belogurov, V.A. Katrich, V.I Kijko
impedance vibrator, biconical vibrator, distributed surface impedance, rectangular waveguide, the method of induced electromotive forces
Vestnik KhNU 806 Pages. 14-17

The problem of the fundamental wave scattering by the thin variable radius impedance vibrator arbitrary situated in a rectangular waveguide was solved. Calculations were carried out and energetic characteristics of such structures were plotted

Download >>

A.V. Arkhipov, V.T. Plaksiy, I.K. Kuzmichev, E.D. Prokhorov, A.V. Dydchenko, D.P. Chuechkov
millimeter wave range, impedance, IMPATT diode, conductance, susceptance
Vestnik KhNU 806 Pages. 59-64

The calculated and experimental results of the impedance of the impact avalanche transit-time (IMPATT) diode for the 8 millimeter wavelength range have been presented. The dependences of the IMPATT diode impedance as a function of the normalized amplitude the fundamental current harmonic of the p-n junction and frequency have been calculated and measured. The apparatus and measuring method of the conductance and susceptance of the IMPATT diode has been developed

Download >>

O.V. Botsula, D.V. Pavlenko, E.D. Prokhorov
LSA diodes, generation efficiency, nitrides, drift velocity, harmonics
Vestnik KhNU 806 Pages. 65-69

In this work an impact ionization in LSA diodes on basis of GaN is considered. Analytical calculation of typical times of passing of a number of the physical processes determining properties of the oscillator, and limitings imposed by them on frequency properties of the diode is submitted. It is shown, that at developing impact ionization in LSA diodes, according to the diffusive theory, the considered compounds are perspective for manufacturing LSA diodes for work in sm and mm - ranges (electrical pressure over threshold 3 5 times, at an efficiency up to 11 13 %). The results of calculation of efficiency of oscillators on basis of GaN LSA diodes are given at their work in modes on a base frequency and at a harmonic generation.

Download >>

16.  Theory of the millimeter waves o-type clinotron amplifier
E.N. Odarenko, A.A. Shmat'ko
nonlinear multidimensional theory, clinotron amplifier, electrons settling
Vestnik KhNU 806 Pages. 75-81

Nonresonant amplifier O-type system with inclined focusing field is considered. Theoretical investigation is carried out within the framework of the beam-wave interaction multidimensional model. Input signal power, focusing field magnetic induction value and electrons settling on the electrodynamical system surface are taking into account

Download >>

17.  Subterahertz diffraction radiation on the BWO frequency harmonics in the parametrical two-regimes electron device
E.N.Odarenko, A.A.Shmatko, P.V. Yudintcev
diffraction radiation, Smith-Purcell effect, subterahertz waves, beam-wave interaction, nonlinear processes
Vestnik KhNU 834 Pages. 13-17

Diffraction radiation nonlinear theory that takes into account two-regimes interaction self-consistent regimes of the BWO and GDI on the BWO frequency harmonics is developed. The existence of the BWO generation regime on the first harmonic and parametric type diffraction radiation amplification regime on the BWO frequency harmonics is shown on the base of the self-consistent equations set numerical solution. Ranges of the task parameters values that correspond to two-regimes interaction are defined

Download >>

18.  Far-field distance of waveguide radiators
N.N. Gorobets, E.E. Ovsyannikova, A.V. Shishkova
rectangular waveguide, microwaves, boundary of far zone, amplitude, phase radiation characteristics
Vestnik KhNU 834 Pages. 68-76

On the basis of Hertz potentials in Kirchhoff approximation the amplitude and phase radiation characteristics of open-ended rectangular waveguide excited by TE10 dominant mode are investigated at arbitrary distance from radiating aperture. The estimation criteria of far zone boundary for small (in comparison with the wavelength) waveguide radiators are presented. For such small radiators, the classic formula for calculation of far-field distance cannot be applied. Under suggested criteria the investigation of radiation characteristics are carried out. For waveguides with the sizes less then the wavelength in the waveguide, the boundaries of far-field distance are defined

Download >>

19.  Frequency multiplication at impact ionization in GaN-diodes
. V. Botsula, D. V. Pavlenko, E. D. Prokhorov
the GaN diode, coefficient conversion transducing, drift velocity, harmonics
Vestnik KhNU 834 Pages. 100-103

The frequency multiplication at impact ionization in transfer electron GaN diodes nave been considered. The coefficient conversion transducing increase if impact ionization in GaN diodes takes place have been demonstrated. For example, coefficient conversion transducing in second harmonic arrive at 40 %.

Download >>

20.  Cathode static domen in transfer electron devise
. V. Botsula, D.V. Pavlenko, E.D. Prokhorov
static domen, velocity field characteristic, electric field strange
Vestnik KhNU 834 Pages. 104-107

The diode in which static cathode domen and under certain conditions impact ionization takes place has being considered. Transit time effect and noise oscillations takes place under impact ionization. The volatge to be lead to electric field strange abow 200 /sm (for gomogenues velosity field characteristic in ower dides) have been derermened

Download >>

21.  Potentially unbreacable ciphering on a hybrid physical-mathematical level
A. G. Tyzhnenko, E. V. Ryeznik
bit, stochastic signals, safe communication, hard drive protection
Vestnik KhNU 834 Pages. 108-113

A new kind of ciphering based on stochastic representation of bits as series of samples is addressed. Stochastic comparison is used for bit identification. Security level is increased by adding noise samples to signal samples and mixing signal samples with noise samples within one signal packet. The signal packet length and distribution features of signal samples among noise samples in signal packets are unique for given communication line, as well as stochastic representation of bits (0s and 1s). Using of noise in signal packets leads to enormous large computation in decrypting process which is unrealistically to do regardless what computer system is used. More to the point, the unique features of communication line mentioned above can be changed for each message that prevents information leakage in the case of stealing these ones in any previous period. Impossibility of decrypting by any reasonable time period of any message eavesdropped by a cryptanalyst guarantees the confidence of information which has permanent importance

Download >>

22.  Pulse water insonification for laboratory research of electromagnetic wave propagation and dispersion in randomly inhomogeneous media in order to meet the conditions close to working ones
V.B. Yuferov, A.N. Ponomarev, E.V. Mufel, A.N. Ozerov, I.V. Buravilov, V.N. Ishenko
electromagnetic wave propagation, inhomogeneous medium, air bubbles in liquid, acoustic pulse pneumatic radiator
Vestnik KhNU 834 Pages. 114-119

The efficiency of pulse water insonification by pneumatic radiator is shown. Such radiator enables the formation above the water surface of hydrometcors and aerosols with a desired concentration. It is necessary for laboratory research of fluctuation phenomena of the electromagnetic wave propagation in randomly inhomogeneous media. The use of pneumatic radiator makes possible lo remove salt from the solution. This enables a certain degree of control over liquid permittivity

Download >>

23.  Capacitance-voltage measurements in selectively doped ALGAAS/GAAS heterostructures
N.B.Gorev, I.F. Kodzhespirova, E.N. Privalov
gallium arsenide, selectively doped heterostructures, Schottky barrier, barrier capacitance, capacitancevoltage measurements
Vestnik KhNU 853 Pages. 3-7

The dependence of the measured apparent capacitance of selectively doped AlGaAs/GaAs heterostructures on the amplitude of the measuring ac voltage is calculated numerically. An expression that gives the measured apparent capacitance as a function of the true capacitance and the above amplitude is derived. Using this expression and the results of the above numerical calculation, it is shown that capacitancevoltage characteristics of selectively doped AlGaAs/GaAs heterostructures, which feature steeply dropping regions, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amplitudes

Download >>

24.  Oscillation efficiency of TED diodes on the basis of nitrides
E. D. Prokhorov, O. V. Botsula, A. N. Zabazhan
AlN, GaN, InN-diodes, drift speed, oscillation efficiency
Vestnik KhNU 853 Pages. 15-21

Oscillation efficiency of intervalley transfer electrons diodes on the basis of nitrides (InN, GaN, AlN) is considered. Electric fields at peak oscillation efficiency are determined. The results have been compared to results for GaAs. The account of floatable potential in connections InGaN improves their power characteristics in comparison with power characteristics of these connections without taking into account floatable potential, maximal efficiency In0.8 Ga 0.2N and In0.5Ga0.5N diodes to compare to InN diodes on 30 % is higher (22 % to compare to 16,43 %) but at more high tensions of an electric field. The maximal oscillation efficiency is observed at higher electric fields than GaAs ( from 250 V/sm for InN to 1000 kV/sm for AlN)

25.  Influence of aperture-illumination law on near-field characteristics of aperture antennas
E.E. Ovsyannikova, A.V. Shishkova, N.N. Gorobets
electromagnetic waves, reactive fields, aperture radiators, Kirchhoff technique, near-field, far-field, amplitude distributions, phase characteristics, amplitude characteristics, reactive radiation power
Vestnik KhNU 853 Pages. 28-36

On the basis of Hertz potentials the investigation of near-field reactive region of square aperture antennas with various aperture illumination laws has been carried out. The influence of the field amplitude distribution law in the aperture on the extension of this region has been studied. The calculation and analysis of amplitude, phase and power radiation characteristics, including reactive radiation power density, at the different planes in near-field region have been carried out. The analysis of the criteria for estimation of near-field reactive region boundary has been carried out

Download >>

E. D. Prokhorov, O.V. Botsula, I. A. Grishchenko
AlN, GaN, InN diodes, frequency transformation factor , drift velocity, harmonics.
Vestnik KhNU 883 Pages. 30-34

Multiplication of frequency at impact ionization in intervalley transfer electron diodes on basis InN, AlN is considered. The current voltage characteristics of intervalley transfer electron diodes have negative conductivity region and strong increasing

Download >>

27.  NonstationarY processes in the hybrid O-type beam-wave system
Odarenko E.N., Shmatko A.A.
nonautonomous oscillatory system, locking, beats
Vestnik KhNU 966 Pages. 23-30

Nonstationary processes in the resonant beam-wave system with pre-modulated electron beam are investigated in this work. Theoretical analysis is performed on the basis of the nonlinear multidimensional theory of the hybrid O-type electron devices. Basic regularities of the external signal power effect on the lock range width are described. Regimes of the oscillations synchronization, beats and squitter for different values of the oscillation system and ex-ternal signal parameters are considered.

Download >>

28.  Impedance characteristics of planar diodes with tunnel boundaries based on GaAs
Prokhorov E.D., Botsula O.V., Klimenko O.A.
: negative differential conductivity, tunnel boundary, a diode, the tunneling.
Vestnik KhNU 966 Pages. 13-18

The impedance characteristics of the diodes are consider, which negative differential conductivity (NDC) is arise under cer-tain voltage, due to tunneling of electrons through the side faces of the diode, which can be used for generation, amplification and multiplication. Depending on the active and reactive components of impedance are determined of the diode with the tun-nel boundaries for the real parameters of the diodes. It is shown that the limiting frequency of the diode NDC is in the tera-hertz range and depends on its parameters.

Download >>

29.  Determena Frequency properties of intervalley electron transfer in AlN
V. T. Plaksiy, .V.Arhipov, . S. Tischenko, . . Kamishanova, E.D. Prokhorov, .V.Dyadchenko, D. P.Chueshkov
perfect crystal, zone overcrystallization, temperature gradient
Vestnik KhNU 966 Pages. 19-22

The problem of growing of perfect bismuth-antimony monocrystals having of a uniform distribution of Sb atoms through the crystal by help floating-zone refining method is considered. The expression for temperature gradient in melt and temperature distribution for any melt point have been obtained. The monocrystals growing maximal velocity have been estimated. The growing velocity must be lower then 1 mm per hour was showed. It is velocity not lead to concentration overcooling and arising inhomogeneous dendrite structure. For solution with certain composition ( at = const) overcooling may be eliminated by either increasing of temperature gradient in liquid faze or decreasing growing velocity are showed.

Download >>

founded: 29 result (s)
Development - V.N. Karazin Kharkov National university